Published August 12, 2002
| Version v1
Journal article
Pattern-induced ripple structures at silicon-oxide/silicon interface by excimer laser irradiation
- 1. Laser Microprocessing Laboratory and Silicon Nano Device Laboratory, Department of Electrical and Computer Engineering, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260 (Singapore)
Description
Ripple structures by KrF excimer laser irradiation have been observed on a silicon surface capped with a thin layer of patterned silicon oxide. The ripples are highly dependent on the patterns of the silicon oxide. They are centered and enhanced at the boundaries of the opened windows, forming a radial-wavelike structure. The formation of the ripples is attributed to the combined effect of surface stress, surface scattered wave and boundary effects
Additional details
Identifiers
- DOI
- 10.1063/1.1496141;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 81
- Journal Issue
- 7
- Journal Page Range
- p. 1344-1346
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 35032336
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Numerical Data
- Descriptors DEI
- EXPERIMENTAL DATA; INTERFACES; LASER RADIATION; SEMICONDUCTOR MATERIALS; SILICON; SILICON OXIDES; STRESSES; SURFACES
- Descriptors DEC
- CHALCOGENIDES; DATA; ELECTROMAGNETIC RADIATION; ELEMENTS; INFORMATION; MATERIALS; NUMERICAL DATA; OXIDES; OXYGEN COMPOUNDS; RADIATIONS; SEMIMETALS; SILICON COMPOUNDS
Optional Information
- Notes
- (c) 2002 American Institute of Physics.