Published November 16, 2015
| Version v1
Journal article
Publisher's Note: "Electrical spin injection in modulation-doped GaAs from an in situ grown Fe/MgO layer" [Appl. Phys. Lett. 107, 102407 (2015)]
- 1. Department of Physics, Korea University, Seoul 136-713 (Korea, Republic of)
- 2. Center for Spintronics, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of)
- 3. KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 136-701 (Korea, Republic of)
- 4. Department of Nanomaterials Science and Engineering, Korea University of Science and Technology, Daejeon 305-350 (Korea, Republic of)
Description
no abstract available
Additional details
Identifiers
- DOI
- 10.1063/1.4932535;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 107
- Journal Issue
- 20
- Journal Page Range
- p. 209901-209901.1
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47056094
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- DOPED MATERIALS; GALLIUM ARSENIDES; LAYERS; MAGNESIUM OXIDES; MODULATION; SPIN
- Descriptors DEC
- ALKALINE EARTH METAL COMPOUNDS; ANGULAR MOMENTUM; ARSENIC COMPOUNDS; ARSENIDES; CHALCOGENIDES; GALLIUM COMPOUNDS; MAGNESIUM COMPOUNDS; MATERIALS; OXIDES; OXYGEN COMPOUNDS; PARTICLE PROPERTIES; PNICTIDES
Optional Information
- Notes
- (c) 2015 AIP Publishing LLC