Published 1988
| Version v1
Book
Growth kinetics of solution grown Zn0.2Cd0.8S thin films
Description
The authors describe the nucleation and growth kinetics of Zn0.2Cd0.8S thin films grown at about 900C by the solution growth method on various substrates like glass, tin-oxide coated glass, quartz and p-Si studied by using Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM) and Electron diffraction techniques. The appearance of fiberous structure of Zn0.2Cd0.8S films grown on glass and tin-oxide coated glass in contrast to the appearance of spherical grains of Zn0.2Cd0.8S films grown on quartz and p-Si at smaller thickness, clearly shows the role of the substrates in the growth of the films. With increasing thickness, the influence of the substrate surface decreases and the more stable crystalline phase appears
Additional details
Publishing Information
- Publisher
- IEEE Service Center.
- Imprint Place
- Piscataway, NJ (USA)
- Imprint Title
- Twentieth IEEE photovoltaic specialists conference, 1988
- Imprint Pagination
- 1671 p.
- Series
- Volume 1-2.
- Journal Page Range
- p. 1591-1593.
Conference
- Title
- 20. IEEE photovoltaic specialists conference.
- Dates
- 26-30 Sep 1988.
- Place
- Las Vegas, NV (USA).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 21035313
- Subject category
- S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CADMIUM SULFIDES; CHEMICAL REACTION KINETICS; CRYSTAL GROWTH; FABRICATION; GLASS; STRUCTURAL CHEMICAL ANALYSIS; SUBSTRATES; TIN OXIDES; ZINC SULFIDES
- Descriptors DEC
- CADMIUM COMPOUNDS; CHALCOGENIDES; KINETICS; OXIDES; OXYGEN COMPOUNDS; REACTION KINETICS; SULFIDES; SULFUR COMPOUNDS; TIN COMPOUNDS; ZINC COMPOUNDS
Optional Information
- Secondary number(s)
- CONF-880965--.