Published 1988 | Version v1
Book

Growth kinetics of solution grown Zn0.2Cd0.8S thin films

  • 1. National Physical Lab., New Delhi (India)

Description

The authors describe the nucleation and growth kinetics of Zn0.2Cd0.8S thin films grown at about 900C by the solution growth method on various substrates like glass, tin-oxide coated glass, quartz and p-Si studied by using Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM) and Electron diffraction techniques. The appearance of fiberous structure of Zn0.2Cd0.8S films grown on glass and tin-oxide coated glass in contrast to the appearance of spherical grains of Zn0.2Cd0.8S films grown on quartz and p-Si at smaller thickness, clearly shows the role of the substrates in the growth of the films. With increasing thickness, the influence of the substrate surface decreases and the more stable crystalline phase appears

Additional details

Publishing Information

Publisher
IEEE Service Center.
Imprint Place
Piscataway, NJ (USA)
Imprint Title
Twentieth IEEE photovoltaic specialists conference, 1988
Imprint Pagination
1671 p.
Series
Volume 1-2.
Journal Page Range
p. 1591-1593.

Conference

Title
20. IEEE photovoltaic specialists conference.
Dates
26-30 Sep 1988.
Place
Las Vegas, NV (USA).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
21035313
Subject category
S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CADMIUM SULFIDES; CHEMICAL REACTION KINETICS; CRYSTAL GROWTH; FABRICATION; GLASS; STRUCTURAL CHEMICAL ANALYSIS; SUBSTRATES; TIN OXIDES; ZINC SULFIDES
Descriptors DEC
CADMIUM COMPOUNDS; CHALCOGENIDES; KINETICS; OXIDES; OXYGEN COMPOUNDS; REACTION KINETICS; SULFIDES; SULFUR COMPOUNDS; TIN COMPOUNDS; ZINC COMPOUNDS

Optional Information

Secondary number(s)
CONF-880965--.