Published 1986
| Version v1
Journal article
Nature of the electron- and gamma-induced radiation effects in power silicon semiconductor devices
Creators
- 1. CKD Polovodice, Prague (Czechoslovakia)
- 2. Ustav pro Vyzkum, Vyrobu a Vyuziti Radioisotopu, Prague (Czechoslovakia)
Description
Kinetics of the radiation defect formation in silicon power devices irradiated with electrons or gamma quanta is discussed. (author)
Additional details
Publishing Information
- Journal Title
- Radiat. Phys. Chem.
- Journal Volume
- 28
- Journal Issue
- 5-6
- Series
- Radiat. Phys. Chem.
- Journal Page Range
- 439-440
- ISSN
- 0146-5724
- CODEN
- RPCHD
Conference
- Title
- Brdicka Days on radiation chemistry international meeting.
- Dates
- 1986.
- Place
- Marianske Lazne (Czechoslovakia).
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 18052876
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- A CENTERS; ELECTRON BEAMS; GAMMA RADIATION; IRRADIATION; PHYSICAL RADIATION EFFECTS; REACTION KINETICS; SILICON DIODES; THYRISTORS
- Descriptors DEC
- BEAMS; COLOR CENTERS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELECTROMAGNETIC RADIATION; IONIZING RADIATIONS; KINETICS; LEPTON BEAMS; PARTICLE BEAMS; POINT DEFECTS; RADIATION EFFECTS; RADIATIONS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; VACANCIES