Published May 15, 1984
| Version v1
Journal article
High resistivity in InP by helium bombardment
- 1. AT and T Bell Laboratories, Murray Hill, New Jersey 07974
Description
Helium implants over a fluence range from 1011 to 1016 ions/cm2, reproducibly form high resistivity regions in both p- and n-type InP. Average resistivities of greater than 109 Ω cm for p-type InP and of 103 Ω cm for n-type InP are reported. Results are presented of a Monte Carlo simulation of helium bombardment into the compound target InP that yields the mean projected range and the range straggling
Additional details
Publishing Information
- Journal Title
- J. Appl. Phys.
- Journal Volume
- 55
- Journal Issue
- 10
- Series
- J. Appl. Phys.
- Journal Page Range
- 3859-3862
- ISSN
- 0021-8979
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 16013359
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- COLLISIONS; COMPUTERIZED SIMULATION; ELECTRIC CONDUCTIVITY; HELIUM IONS; INDIUM PHOSPHIDES; ION COLLISIONS; ION IMPLANTATION; MONTE CARLO METHOD; PHYSICAL RADIATION EFFECTS; ZINC IONS
- Descriptors DEC
- ATOMIC IONS; CHARGED PARTICLES; ELECTRICAL PROPERTIES; INDIUM COMPOUNDS; IONS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHYSICAL PROPERTIES; RADIATION EFFECTS; SIMULATION