Published April 16, 1989 | Version v1
Journal article Metadata-only

Processes of radiation defect interaction and amorphisation of silicon at large implantation doses

Creators

  • 1. Uniwersytet Marii Curie-Sklodowskiej, Lublin (Poland). Inst. Fizyki
  • 2. Belorusskij Gosudarstvennyj Univ., Minsk (Byelorussian SSR)

Description

Factors determining the accumulation of point defects in Si at ion implantation are considered. A simple dynamic model of amorphous semiconductors is developed. (author)

Additional details

Publishing Information

Journal Title
Physica Status Solidi A
Journal Volume
112
Journal Issue
2
Series
Phys. Status Solidi A.
Journal Page Range
695-698
ISSN
0031-8965
CODEN
PSSAB

Conference

Title
International conference on ion implantation in semiconductor and other materials.
Dates
12-17 Sep 1988.
Place
Lublin (Poland).

INIS

Country of Publication
Germany
Country of Input or Organization
German Democratic Republic
INIS RN
20073355
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S74: ATOMIC AND MOLECULAR PHYSICS;
Resource subtype / Literary indicator
Conference
Descriptors DEI
AMORPHOUS STATE; COMPUTERIZED SIMULATION; CRYSTAL DEFECTS; ION IMPLANTATION; MATHEMATICAL MODELS; PHYSICAL RADIATION EFFECTS; POINT DEFECTS; RADIATION DOSES; SEMICONDUCTOR MATERIALS; SILICON
Descriptors DEC
CRYSTAL STRUCTURE; ELEMENTS; MATERIALS; RADIATION EFFECTS; SEMIMETALS; SIMULATION