Published May 1981
| Version v1
Journal article
A study on the electrical properties of the CdTe thin film
Description
According to conductivity mechanism of semiconductor, we have investigated the conductivity of polycrystalline CdTe. It was based upon space-charge-limited region and band model structure of amorphous semiconductor. We have found by analysis of experimental results that the conductivity mechanism was trap-dominated. The activation energy (phi=0.05 eV) was calculated from experimental data and was not dependent on thickness of sample. (author)
Additional details
Publishing Information
- Journal Title
- J. Gyeongsang Natl. Univ., Nat. Sci.
- Journal Volume
- 20
- Series
- J. Gyeongsang Natl. Univ., Nat. Sci.
- Journal Page Range
- 177-180
INIS
- Country of Publication
- Korea, Republic of
- Country of Input or Organization
- Korea, Republic of
- INIS RN
- 12629124
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ACTIVATION ENERGY; AMORPHOUS STATE; CADMIUM TELLURIDES; ELECTRIC CONDUCTIVITY; FILMS; POLYCRYSTALS; SEMICONDUCTOR MATERIALS
- Descriptors DEC
- CADMIUM COMPOUNDS; CHALCOGENIDES; CRYSTALS; ELECTRICAL PROPERTIES; ENERGY; PHYSICAL PROPERTIES; TELLURIDES; TELLURIUM COMPOUNDS