Published May 2013
| Version v1
Journal article
Two-photon absorption induced anti-Stokes emission in single InGaN/GAN quantum-dot-like objects
- 1. Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510 (Japan)
- 2. Department of Electrical and Electronics Engineering, Sophia University, Tokyo 102-8554 (Japan)
Description
We observed crossed transitions and anti-Stokes emissions in single quantum-dot-like objects embedded in the active layer of InGaN/GaN quantum disks by two-photon absorption techniques. We proposed a phenomenological model based on the interplay between Auger effect and crossed transitions to explain the origin of anti-Stokes emissions and the preferential excitation of 0D objects at the expense of their surroundings. (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
Availability note (English)
Available from: http://dx.doi.org/10.1002/pssr.201307067Additional details
Identifiers
Publishing Information
- Journal Title
- Physica Status Solidi. Rapid Research Letters (Online)
- Journal Volume
- 7
- Journal Issue
- 5
- Journal Page Range
- p. 344-347
- ISSN
- 1862-6270
- CODEN
- PSSRCS
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 44076294
- Subject category
- S36: MATERIALS SCIENCE; S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- ABSORPTION; AUGER EFFECT; EMISSION SPECTRA; ENERGY SPECTRA; EXCITATION; GALLIUM NITRIDES; INDIUM NITRIDES; LAYERS; MATHEMATICAL MODELS; MULTI-PHOTON PROCESSES; ORIGIN; PHOTOLUMINESCENCE; PHOTON COLLISIONS; QUANTUM DOTS; ULTRAVIOLET SPECTRA; VISIBLE SPECTRA
- Descriptors DEC
- COLLISIONS; EMISSION; ENERGY-LEVEL TRANSITIONS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LUMINESCENCE; NANOSTRUCTURES; NITRIDES; NITROGEN COMPOUNDS; PHOTON EMISSION; PNICTIDES; SORPTION; SPECTRA
Optional Information
- Notes
- With 4 figs., 22 refs.