Radiation defects and electrical properties of silicon layers containing Sb and As implanted with Si+ ions

Accumulation and annealing of the radiation defects in silicon layers containing Sb and As and implanted with Si+ ions have been investigated with the help of EPR and X-ray diffraction methods. For n-type silicon with high doping level the dose of the beginning of amorphization is decreased in comparison with that for low doped samples. This effect is explained by the appearance of the Coulomb barrier for the annihilation of carged defects having the same electrical charge sign. Impurities of Sb and As have been established to be the part of the multivacancy complexes with an increased thermal stability by 100degC in comparison with intrinsic complexes in silicon. (orig.)