Atomistic study of stability of xenon nanoclusters in uranium oxide
Creators
- 1. DEN, Service de Chimie Physique, CEA, F-91191 Gif-sur-Yvette (France)
- 2. DEN, Service d'Etudes et de Simulation du Comportement des Combustibles, CEA, F-13108 Saint-Paul lez Durance (France)
Description
Density-functional theory calculations of the xenon incorporation energies in point defects in urania have been done in order to fit empirical potentials. With this set of parameters, we have considered the incorporation of xenon in small and extended defects such as planar interstitials, grain boundaries, faceted, and spherical voids. The results show that xenon atoms are more likely to aggregate than to be homogeneously distributed in the urania grains. Σ5 grain boundary and spherical shape voids are the most favorable defects of xenon atom incorporation. The presence of xenon atoms in nanovoids affects their shape. The energy gain to aggregate xenon atoms into clusters saturates for cluster sizes of about 15-20 Schottky defects. This demonstrates that medium size defects are just as favorable as big size defects for xenon incorporation.
Additional details
Identifiers
Publishing Information
- Journal Title
- Physical Review. B, Condensed Matter and Materials Physics
- Journal Volume
- 81
- Journal Issue
- 17
- Journal Page Range
- p. 174111-174111.9
- ISSN
- 1098-0121
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 41099084
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ATOMIC CLUSTERS; ATOMS; DENSITY FUNCTIONAL METHOD; GRAIN BOUNDARIES; INTERSTITIALS; NANOSTRUCTURES; POINT DEFECTS; SCHOTTKY DEFECTS; SPHERICAL CONFIGURATION; STABILITY; URANIUM OXIDES; VOIDS; XENON
- Descriptors DEC
- ACTINIDE COMPOUNDS; CALCULATION METHODS; CHALCOGENIDES; CONFIGURATION; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTS; FLUIDS; GASES; MICROSTRUCTURE; NONMETALS; OXIDES; OXYGEN COMPOUNDS; POINT DEFECTS; RARE GASES; URANIUM COMPOUNDS; VACANCIES; VARIATIONAL METHODS
Optional Information
- Notes
- (c) 2010 The American Physical Society