Published November 1985
| Version v1
Journal article
Effect of laser annealing on the Raman spectra in the implanted silicon layers
- 1. AN SSSR, Moscow. Fizicheskij Inst.
Description
Raman scattering spectroscopy has been employed to show that laser annealing of the implanted silicon crystals gives rise to the tensile stress (about 109 N/m2) in the near-surface layer of the sample. This stress is removed after a thermal annealing. The explanation is proposed for the observed phenomenon
Additional details
Additional titles
- Original title (Russian)
- Влияние лазерного отжига на спектры комбинационного рассеяния в имплантированных слоях кремния
Publishing Information
- Journal Title
- Poverkhn.: Fiz., Khim., Mekh.
- Journal Issue
- no.11
- Series
- Poverkhn.: Fiz., Khim., Mekh.
- CODEN
- PFKMD
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 17056344
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- AMORPHOUS STATE; ANNEALING; ARSENIC IONS; INFRARED SPECTRA; ION IMPLANTATION; KEV RANGE 10-100; LASER RADIATION; MONOCRYSTALS; PHOSPHORUS IONS; RAMAN SPECTRA; RECRYSTALLIZATION; SILICON; STRESSES; SURFACE PROPERTIES
- Descriptors DEC
- ATOMIC IONS; CHARGED PARTICLES; CRYSTALS; ELECTROMAGNETIC RADIATION; ELEMENTS; ENERGY RANGE; HEAT TREATMENTS; IONS; KEV RANGE; RADIATIONS; SEMIMETALS; SPECTRA