Trial-produce and performance research of fast diode by using high-energy electron irradiation technology

This paper reported the new technology on controlling the minority carrier life time of fast diode by using high energy 12 MeV electronic radiation, discussed the influence of high-energy electron irradiation to the device's reverse recovery time t_rr and positive peak pressure drop V_FM, and studied the nature of the defects' energy level. Application results show that the defect level introduced by irradiation directly cause the V_FM and t_rr'S change, this technology can successfully replace the traditional technique of gold doped process, and have a lot of advantages such as high control precision, high consistency of t_rr and V_FM, repeatability, high percent of pass and simple process, so this technology has promising future. (authors)