Published March 1985
| Version v1
Journal article
Defect production and stability in high-energy-density cascades in Ni
- 1. Salford Univ. (UK). Dept. of Electronic and Electrical Engineering
- 2. McMaster Univ., Hamilton, Ontario (Canada). Dept. of Engineering Physics
Description
Ion implantation into Ni single crystals was carried out at 40 K and room temperature using monatomic Sb+ and diatomic Sb2+ ions for implantation doses in the range proportional 2 x 1013 - 2 x 1014 Sb+ cm-2. The damage level after each implant was measured in situ by observing the Rutherford backscattering yield of 2.0 MeV 4He+ ions channeled along the (110) axis. More damage is retained for low temperature Sb+ and Sb2+ implants and room temperature Sb2+ than for Sb+ implants at room temperature. In the ion fluence regime studied the damage retained, Nsub(D), is a non-linear function of ion fluence PHI. (orig.)
Additional details
Publishing Information
- Journal Title
- Nucl. Instrum. Methods Phys. Res., Sect. B
- Journal Volume
- 7/8
- Journal Issue
- pt.1
- Series
- CODEN: NIMBE.;Nucl. Instrum. Methods Phys. Res., Sect. B.
- Journal Page Range
- 124-127
- ISSN
- 0168-583X
Conference
- Title
- Ion beam modification of materials conference (IBMM '84).
- Dates
- 16-29 Jul 1984.
- Place
- Ithaca, NY (USA).
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 16067229
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANTIMONY IONS; ATOMIC DISPLACEMENTS; DOSE RATES; ION CHANNELING; ION IMPLANTATION; MEDIUM TEMPERATURE; MOLECULAR IONS; MONOCRYSTALS; NICKEL; PHYSICAL RADIATION EFFECTS; VERY LOW TEMPERATURE
- Descriptors DEC
- ATOMIC IONS; CHANNELING; CHARGED PARTICLES; CRYSTALS; ELEMENTS; IONS; METALS; RADIATION EFFECTS; TRANSITION ELEMENTS