Published November 2008 | Version v1
Journal article

Fast optical recording media based on semiconductor nanostructures for image recording and processing

  • 1. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)

Description

Fast optical recording media based on semiconductor nanostructures (CdTe, GaAs) for image recording and processing with a speed to 106 cycle/s (which exceeds the speed of known recording media based on metal-insulator-semiconductor-(liquid crystal) (MIS-LC) structures by two to three orders of magnitude), a photosensitivity of 10-2V/cm2, and a spatial resolution of 5-10 (line pairs)/mm are developed. Operating principles of nanostructures as fast optical recording media and methods for reading images recorded in such media are described. Fast optical processors for recording images in incoherent light based on CdTe crystal nanostructures are implemented. The possibility of their application to fabricate image correlators is shown.

Additional details

Identifiers

Publishing Information

Journal Title
Semiconductors
Journal Volume
42
Journal Issue
11
Journal Page Range
p. 1362-1369
ISSN
1063-7826
CODEN
SMICES

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
41006146
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
CADMIUM TELLURIDES; GALLIUM ARSENIDES; LIQUID CRYSTALS; NANOSTRUCTURES; PHOTOSENSITIVITY; SEMICONDUCTOR MATERIALS; SPATIAL RESOLUTION; VELOCITY
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CADMIUM COMPOUNDS; CHALCOGENIDES; CRYSTALS; FLUIDS; GALLIUM COMPOUNDS; LIQUIDS; MATERIALS; PNICTIDES; RESOLUTION; SENSITIVITY; TELLURIDES; TELLURIUM COMPOUNDS

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Copyright
Copyright (c) 2008 Pleiades Publishing, Ltd.