Published November 2008
| Version v1
Journal article
Fast optical recording media based on semiconductor nanostructures for image recording and processing
Creators
- 1. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
Description
Fast optical recording media based on semiconductor nanostructures (CdTe, GaAs) for image recording and processing with a speed to 106 cycle/s (which exceeds the speed of known recording media based on metal-insulator-semiconductor-(liquid crystal) (MIS-LC) structures by two to three orders of magnitude), a photosensitivity of 10-2V/cm2, and a spatial resolution of 5-10 (line pairs)/mm are developed. Operating principles of nanostructures as fast optical recording media and methods for reading images recorded in such media are described. Fast optical processors for recording images in incoherent light based on CdTe crystal nanostructures are implemented. The possibility of their application to fabricate image correlators is shown.
Additional details
Identifiers
Publishing Information
- Journal Title
- Semiconductors
- Journal Volume
- 42
- Journal Issue
- 11
- Journal Page Range
- p. 1362-1369
- ISSN
- 1063-7826
- CODEN
- SMICES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 41006146
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CADMIUM TELLURIDES; GALLIUM ARSENIDES; LIQUID CRYSTALS; NANOSTRUCTURES; PHOTOSENSITIVITY; SEMICONDUCTOR MATERIALS; SPATIAL RESOLUTION; VELOCITY
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CADMIUM COMPOUNDS; CHALCOGENIDES; CRYSTALS; FLUIDS; GALLIUM COMPOUNDS; LIQUIDS; MATERIALS; PNICTIDES; RESOLUTION; SENSITIVITY; TELLURIDES; TELLURIUM COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2008 Pleiades Publishing, Ltd.