In-situ preparation of Y-Ba-Cu-O thin films on silicon single crystals
Creators
- 1. Max-Planck-Institut fuer Festkoerperforschung, Stuttgart (Germany)
Description
This paper reports on superconducting Y-Ba- Cu-O thin films with critical temperatures exceeding 80 K deposited on silicon single crystal substrates using the pulsed laser deposition technique. Deposition from a sintered Y1Ba2Cu3O7 target in oxygen ambient of 0.1 - 5 mbar onto substrates kept at 700 degrees C to 820 degrees C results in crystalline films in which the target composition of the metallic constituents is preserved. No post deposition treatments are required to obtain high values for the zero resistance. X-ray analysis as well as Raman spectroscopy reveal that specimens prepared at optimum conditions are single phase c-axis oriented. In contrast to films prepared on LaAlO3 or SrTiO3 the surface morphology shows a granular structure. The films prepared by this technique are quite stable against chemicals used in conventional lithographic patterning, however, a strong correlation between film quality before patterning and some degradation after patterning is observed
Additional details
Publishing Information
- Publisher
- Materials Research Society.
- Imprint Place
- Pittsburgh, PA (United States)
- ISBN
- 1-55899-057-7
- Imprint Title
- High-temperature superconductors: Fundamental properties and novel materials processing
- Imprint Pagination
- 1322 p.
- Journal Page Range
- p. 477-480.
Conference
- Title
- Materials Research Society fall meeting.
- Dates
- 27 Nov - 2 Dec 1989.
- Place
- Boston, MA (United States).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 23024538
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CHEMICAL COMPOSITION; CRITICAL TEMPERATURE; CRYSTAL STRUCTURE; ETCHING; FABRICATION; HIGH-TC SUPERCONDUCTORS; IN-SITU PROCESSING; LASER TARGETS; LASER-PRODUCED PLASMA; MONOCRYSTALS; SILICON; SUPERCONDUCTING FILMS
- Descriptors DEC
- CRYSTALS; ELEMENTS; FILMS; ORE PROCESSING; PHYSICAL PROPERTIES; PLASMA; SEMIMETALS; SUPERCONDUCTORS; TARGETS; THERMODYNAMIC PROPERTIES; TRANSITION TEMPERATURE
Optional Information
- Secondary number(s)
- CONF-891119--.