Published August 1978
| Version v1
Journal article
Some properties of Czechoslovak-made dosimetric silicon diodes
Creators
Description
The measurement results of the dosimetric silicon diodes response dependence on the tissue kerma of 14.7 MeV neutrons, the dependence of the response on temperature during evaluation the variance of the initial voltage and its time stability are described. The time stability of the dosimetric information (fading) was also measured. The method of measurement of the 14.7 MeV neutron fluence is also described. (author)
Additional details
Additional titles
- Original title (Czech)
- Nektere vlastnosti kremikovych dozimetrickych diod cs. vyroby
Publishing Information
- Journal Title
- Radioisotopy
- Journal Volume
- 19
- Journal Issue
- 4
- Series
- Radioisotopy.
- Journal Page Range
- 609-633
- ISSN
- 0322-8657
INIS
- Country of Publication
- Czech Republic
- Country of Input or Organization
- Serbia and Montenegro
- INIS RN
- 11509234
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Numerical Data
- Descriptors DEI
- DOSE-RESPONSE RELATIONSHIPS; ELECTRIC POTENTIAL; ERRORS; FAST NEUTRONS; GAMMA RADIATION; KERMA; NEUTRON DOSIMETRY; NEUTRON FLUENCE; PERSONNEL DOSIMETRY; RESPONSE FUNCTIONS; SENSITIVITY; SILICON DIODES; STABILITY; TEMPERATURE DEPENDENCE
- Descriptors DEC
- BARYONS; DOSIMETRY; ELECTROMAGNETIC RADIATION; ELEMENTARY PARTICLES; FERMIONS; FUNCTIONS; HADRONS; IONIZING RADIATIONS; NEUTRONS; NUCLEONS; RADIATIONS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES