Published April 1997
| Version v1
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The investigation of properties of neutron-doped silicon with manganese admixture
Creators
- 1. Tashkentskij Gosudarstvennyj Univ., Tashkent (Uzbekistan). Nauchno-Issledovatel'skij Inst. Prikladnoj
Description
Short communication
Files
28041149.pdf
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Additional details
Additional titles
- Original title (Russian)
- Исследование свойств нейтронно-легированного кремния c примесью марганца
Publishing Information
- Imprint Title
- Abstracts of the international conference on actual problems of physics of semiconductor devices
- Imprint Pagination
- 131 p.
- Journal Page Range
- p. 6.
- Report number
- INIS-UZ--039
Conference
- Title
- International conference on actual problems of physics of semiconductor devices.
- Dates
- 24-26 Apr 1997.
- Place
- Tashkent (Uzbekistan).
INIS
- Country of Publication
- Uzbekistan
- Country of Input or Organization
- Uzbekistan
- INIS RN
- 28041149
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- CRYSTAL DOPING; ENERGY GAP; ENERGY LEVELS; MANGANESE; NEUTRON FLUENCE; PHOTOELECTRIC EFFECT; PHYSICAL RADIATION EFFECTS; SILICON; TRANSMUTATION
- Descriptors DEC
- ELEMENTS; METALS; RADIATION EFFECTS; SEMIMETALS; TRANSITION ELEMENTS
Optional Information
- Notes
- Imprint:Sbornik trudov mezhdunarodnoj konferentsii 'Aktual'nye problemy fiziki poluprovodnikovykh priborov'.