Effect of Pt on agglomeration and Ge out diffusion in Ni(Pt) germanosilicide
Creators
- Jin, L.J.1, 2, 3, 4, 5, 6, 7
- Pey, K.L.1, 2, 3, 4, 5, 6, 7
- Choi, W.K.1, 2, 3, 4, 5, 6, 7
- Fitzgerald, E.A.1, 2, 3, 4, 5, 6, 7
- Antoniadis, D.A.1, 2, 3, 4, 5, 6, 7
- Pitera, A.J.1, 2, 3, 4, 5, 6, 7
- Lee, M.L.1, 2, 3, 4, 5, 6, 7
- Chi, D.Z.1, 2, 3, 4, 5, 6, 7
- Rahman, Md.A.1, 2, 3, 4, 5, 6, 7
- Osipowicz, T.1, 2, 3, 4, 5, 6, 7
- Tung, C.H.1, 2, 3, 4, 5, 6, 7
- 1. Institute of Microelectronics, 11 Science Park Road, Science Park 2, Singapore 117685 (Singapore)
- 2. Physics Department, National University of Singapore, Centre for Ion Beam Applications (CIBA), Block S12, 2 Science Drive 3, Singapore 117542 (Singapore)
- 3. Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602 (Singapore)
- 4. Singapore-Massachusetts Institute of Technology (MIT) Alliance, 4 Engineering Drive 3, Singapore 117576 and Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139-66307 (United States)
- 5. Singapore-Massachusetts Institute of Technology (MIT) Alliance, 4 Engineering Drive 3, Singapore 117576 (Singapore) and Microelectronics Laboratory, Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore)
- 6. Singapore-Massachusetts Institute of Technology (MIT) Alliance, 4 Engineering Drive 3, Singapore 117576 and Microelectronic Center, School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore)
- 7. Singapore-Massachusetts Institute of Technology (MIT) Alliance, 4 Engineering Drive 3, Singapore 117576 (Singapore)
Description
The effect of Pt alloy in Ni(Pt∼5 and 10 at. %) on the agglomeration and Ge out diffusion in nickel germanosilicide formed on Si0.75Ge0.25(100) has been studied. A remarkable improvement in the agglomeration behavior with increasing Pt atomic percentage is observed by sheet resistance measurements while still maintaining Ni(Pt) monogermanosilicide phase between 400 and 800 deg. C. Ge out diffusion from the monogermanosilicide grains has been suppressed up to a temperature of 700 deg. C with the addition of Pt, evident by x-ray diffraction and micro-Raman spectroscopy. In addition, that improvement of surface morphology and suppression of Ge out diffusion with increasing Pt atomic percent is also confirmed by Rutherford backscattering and cross-sectional transmission electron microscopy. The improved morphology and agglomeration are explained by a grain-boundary model which includes kinetic effects. The suppression of Ge out diffusion from the germanosilicide grains is attributed to reduced atomic diffusion and the presence of stronger Pt-Si and Pt-Ge bonds due to the addition of Pt
Additional details
Identifiers
- DOI
- 10.1063/1.1977196;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 98
- Journal Issue
- 3
- Journal Page Range
- p. 033520-033520.6
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37028074
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- AGGLOMERATION; DIFFUSION; ELECTRIC CONDUCTIVITY; GERMANIUM ALLOYS; GRAIN BOUNDARIES; MORPHOLOGY; NICKEL ALLOYS; PLATINUM ALLOYS; RAMAN SPECTRA; RAMAN SPECTROSCOPY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON ALLOYS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0400-1000 K; TEMPERATURE RANGE 1000-4000 K; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION
- Descriptors DEC
- ALLOYS; COHERENT SCATTERING; DIFFRACTION; ELECTRICAL PROPERTIES; ELECTRON MICROSCOPY; LASER SPECTROSCOPY; MICROSCOPY; MICROSTRUCTURE; PHYSICAL PROPERTIES; PLATINUM METAL ALLOYS; SCATTERING; SPECTRA; SPECTROSCOPY; TEMPERATURE RANGE; TRANSITION ELEMENT ALLOYS
Optional Information
- Notes
- (c) 2005 American Institute of Physics