Published December 1999 | Version v1
Journal article Metadata-only

A non-neutral plasma device: electron beam penning trap

Creators

  • 1. China Science and Technology Univ., Hefei (China). Dept. of Modern Physics

Description

An electron beam Penning trap (EBPT) non- neutral plasma system, built to investigate the formation of a dense electron core with the density beyond Brillouin limit and possible application to fusion research, has been described. The density in the center of the EBPT has been verified to be up to 10 times of Brillouin density limit

Additional details

Publishing Information

Journal Title
Plasma Science and Technology
Journal Volume
1
Journal Issue
1
Journal Page Range
p. 33-38
ISSN
1009-0630

INIS

Country of Publication
China
Country of Input or Organization
China
INIS RN
32041625
Subject category
S70: PLASMA PHYSICS AND FUSION TECHNOLOGY;
Descriptors DEI
CLOSED PLASMA DEVICES; ELECTRON BEAM INJECTION; ELECTRON DENSITY; PENNING EFFECT; PLASMA DIAGNOSTICS; TRAPS
Descriptors DEC
BEAM INJECTION; THERMONUCLEAR DEVICES