Published March 1, 1999
| Version v1
Journal article
Fluorescence characteristics of Er-implanted arsenic-doped silica glass waveguides
Creators
- 1. School of Electronic Engineering, Information Technology and Mathematics, University of Surrey, Guildford, Surrey (United Kingdom)
Description
Fluorescence lifetimes up to 8.8 ms have been achieved in arsenic-doped silica glass waveguides implanted with 2.7 MeV Er2+ with a dose of 4.75x1015 ions/cm2 after annealing at 800C for 60 min. These waveguides have a propagation loss of <1 dB/cm at 1528 nm, which is similar to the as-grown structures. (Copyright (c) 1999 Elsevier Science B.V., Amsterdam. All rights reserved.)
Additional details
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
- Journal Volume
- 149
- Journal Issue
- 4
- Journal Page Range
- p. 447-450
- ISSN
- 0168-583X
- CODEN
- NIMBEU
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Belarus
- INIS RN
- 31064279
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANNEALING; ARSENIC ADDITIONS; ERBIUM IONS; FLUORESCENCE; ION IMPLANTATION; MEV RANGE 01-10; PHYSICAL RADIATION EFFECTS; SILICA; TEMPERATURE RANGE 0400-1000 K; WAVEGUIDES
- Descriptors DEC
- ALLOYS; ARSENIC ALLOYS; CHALCOGENIDES; CHARGED PARTICLES; EMISSION; ENERGY RANGE; HEAT TREATMENTS; IONS; LUMINESCENCE; MEV RANGE; MINERALS; OXIDE MINERALS; OXIDES; OXYGEN COMPOUNDS; PHOTON EMISSION; RADIATION EFFECTS; SILICON COMPOUNDS; SILICON OXIDES; TEMPERATURE RANGE