Published August 11, 2003
| Version v1
Journal article
Infusing metal into self-organized semiconductor nanostructures
Creators
- 1. Department of Physics, Graduate School of Science, Osaka University, 1-16 Machikaneyama, Toyonaka, Osaka 560-0043 (Japan)
Description
We show that more complex nanoheterostructures can be formed readily by using templates through a self-organized process. We fabricated silicon/silicide/oxide-heterostructured nanowires by infusing metal into chains of crystalline-silicon nanospheres. The structure and composition were studied using transmission-electron-microscopy-based approaches
Additional details
Identifiers
- DOI
- 10.1063/1.1599970;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 83
- Journal Issue
- 6
- Journal Page Range
- p. 1202-1203
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 35048207
- Subject category
- S36: MATERIALS SCIENCE; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- CHEMICAL ANALYSIS; QUANTUM WIRES; SEMICONDUCTOR MATERIALS; SILICON; SILICON COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; X RADIATION
- Descriptors DEC
- ELECTROMAGNETIC RADIATION; ELECTRON MICROSCOPY; ELEMENTS; IONIZING RADIATIONS; MATERIALS; MICROSCOPY; NANOSTRUCTURES; RADIATIONS; SEMIMETALS
Optional Information
- Notes
- (c) 2003 American Institute of Physics.