Published 1987 | Version v1
Report Open

Annual report of the Interface and Thin Film Physics Laboratory, 1986

Creators

Description

Research on amorphous semiconductors (optimization of radio frequency plasma deposition, analysis of free radical composition in hydrate plasmas, photochemical deposition of amorphous silicon, silicon-germanium alloys with good electron transport properties); characterization of layers and interfaces; and product development (solar cells, charged particle detectors) is presented

Availability note (English)

MF available from INIS under the Report Number.

Abstract (French)

Des recherches sur l'elaboration des semiconducteurs amorphes (optimisation des depots par plasma radiofrequence, analyse de la composition en radicaux libres dans les plasmas d'hydrures; le depot photochimique du silicium amorphe, la realisation d'alliages silicium germanium presentant de bonnes caracteristiques de transport electronique); la caracterisation des couches et des interfaces; et l'elaboration de dispositifs (photopiles solaires, detecteurs de particules chargees) sont presentes

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Additional details

Additional titles

Original title (French)
Rapport d'activite 1986. Laboratoire de Physique des Interfaces et des Couches Minces

Publishing Information

Imprint Pagination
12 p.
Report number
EP-LPICM-RA--1986

INIS

Country of Publication
France
Country of Input or Organization
France
INIS RN
20021924
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Progress Report
Descriptors DEI
AMORPHOUS STATE; GERMANIUM; INTERFACES; PLASMA ARC SPRAYING; PROGRESS REPORT; RADICALS; RESEARCH PROGRAMS; SEMICONDUCTOR MATERIALS; SILICON; SOLAR CELLS; THIN FILMS
Descriptors DEC
DEPOSITION; DIRECT ENERGY CONVERTERS; ELECTRONIC EQUIPMENT; ELEMENTS; EQUIPMENT; FILMS; MATERIALS; METALS; SEMIMETALS; SPRAY COATING; SURFACE COATING