The role of oxygen in instability of carbon-containing radiation defects in silicon

Behaviour of deep levels of carbon-containing radiation defects in high-ohmic zone melting prepared Si base p+-n-structures, is studied. The defects are introduced at α-particle irradiation. Parameters of centres are measured using DLTS technique. Kinetics of annealing of interstitial carbon is determined. The important role of oxygen introduced into high-ohmic Si at long-time high-temperature thermal oxidation during detector development, is shown. 15 refs.; 5 figs.; 2 tabs