Ionic compensation of diode structures of silicon carbide

The ionic compensation (passivation) of carbide-silicon structures with a shallow p-n junction for the production of diodes has been studied. The degree of compensation has been estimated by measuring leakage currents in diodes thus obtained and their comparing them with leakage currents in mesadiodes fabricated on the same structures. It has been shown that the dose dependence of leakage currents for all ions under consideration has a minimum corresponding to the deepest compensation of free carriers by radiation defects. Thermal treatment of irradiated structures sharply increases the degree of compensation and approaches leak-age currents in passivated diodes to leakage currents in mesadiodes