Published November 7, 2015 | Version v1
Journal article

Structural, magnetic, and transport properties of Fe-doped CoTiSb epitaxial thin films

  • 1. Shanghai Key Laboratory of Special Artificial Microstructure and Pohl Institute of Solid State Physics and School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China)
  • 2. School of Materials Science and Engineering, Shanghai University, Shanghai 200444 (China)

Description

Epitaxial intrinsic and Fe-doped CoTiSb thin films with C1b structure were grown on MgO(100) substrates by magnetron sputtering. The semiconducting-like behavior in both intrinsic and Fe-doped thin films was demonstrated by temperature dependence of longitudinal resistivity. The Fe-doped CoTiSb films with a wide range of doping concentrations can maintain semiconducting-like and magnetic properties simultaneously, while the semiconducting behavior is weakening with the increasing Fe concentration. For 21 at. % Fe-doped film, low lattice magnetic moment (around 0.65 μB) and high resistivity (larger than 800 μΩ cm) are beneficial to its application as a magnetic electrode in spintronic devices. Anomalous Hall effect of 21 at. % Fe-doped film was also investigated and its behaviors can be treated well by recent-reported anomalous Hall scaling including the contribution of spin-phonon skew scattering

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Applied Physics
Journal Volume
118
Journal Issue
17
Journal Page Range
p. 173905-173905.5
ISSN
0021-8979
CODEN
JAPIAU

Optional Information

Notes
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