Dynamic reflection high-energy electron diffraction observations of the atomic layer epitaxy growth of Zn chalcogenides

Intensity variations of reflection high-energy electron diffraction (RHEED) during atomic layer epitaxy (ALE) growth of Zn chalcogenides are investigated. The specular beam intensity varies exponentially with time when the surface changes between Zn-covered surface and Se-covered one. Simultaneously, the surface reconstruction changes corresponding to the change of the outermost surface layer. The time constant shows the adsorption time of an impinging molecular beam. The adsorption time constants are investigated as a function of K-cell temperatures and the substrate temperature. The growth dynamics of ALE of Zn chalcogenides thus can be investigated from variations in the RHEED intensity. (author)