Published March 2007 | Version v1
Journal article

Nucleation and growth of C60 overlayers on the Ag/Pt(111) dislocation network surface

  • 1. Empa, Swiss Federal Laboratories for Materials Testing and Research, Feuerwerkerstrasse 39, CH-3602 Thun (Switzerland)

Description

We have investigated the room temperature growth of C60 overlayers on the strainrelief dislocation network formed by two monolayers of Ag on Pt(111) by means of scanning tunneling microscopy. Extended domains of highly ordered dislocation networks with a typical superlattice parameter of 6.8 nm have been prepared, serving as templates for subsequent C60 depositions. For low C60 coverages, the molecules decorate the step-edges, where also the first islands nucleate. This indicates that at room temperature the C60 molecules are sufficiently mobile to cross the dislocation lines and to diffuse to the step-edges. For C60 coverages of 0.4 monolayer, besides the islands nucleated at the step-edges, C60 islands also grow in the middle of terraces. The C60 islands typically extend over several unit cells of the dislocation network and show an unusual orientation of the hexagonally close-packed C60 lattice as compared to that found on the bare Ag(111) surface. Whereas C60 grows preferentially in a (2 √3 x 2 √3) R300 structure on Ag(111), on the Ag/Pt(111) dislocation network the C60 lattice adopts an orientation rotated by 300, with the close-packed C60 rows aligned along the dislocations which themselves are aligned along the Ag(1-10) directions. For higher coverages in the range of 1-2 monolayers, the growth of C60 continues in a layer-by-layer fashion

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Physics. Conference Series (Online)
Journal Volume
61
Journal Issue
1
Journal Page Range
p. 16-21
ISSN
1742-6596

Conference

Title
International conference on nanoscience and technology
Dates
30 Jul - 4 Aug 2006
Place
Basel (Switzerland)

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
38077891
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CRYSTAL GROWTH; DEPOSITION; DISLOCATIONS; FULLERENES; HCP LATTICES; INTERFACES; LAYERS; MOLECULES; NUCLEATION; ORIENTATION; PLATINUM; SCANNING TUNNELING MICROSCOPY; SILVER; SUPERLATTICES; SURFACES
Descriptors DEC
CARBON; CRYSTAL DEFECTS; CRYSTAL LATTICES; CRYSTAL STRUCTURE; ELEMENTS; HEXAGONAL LATTICES; LINE DEFECTS; METALS; MICROSCOPY; NONMETALS; PLATINUM METALS; TRANSITION ELEMENTS