Contribution of the electron subsystem of a crystals into reactions between multicharged centers in semiconductors

The defect complex formation reactions in semiconductors has been considered. The contribution of the electron subsystem of crystals into the reaction rate was regarded as an addition of the change in the electron subsystem energy to the reaction energy barrier. The comparison of the results calculated against the experimental data is carried out in the case of the accumulation of the radiation-induced A- and E-centers in silicon. Satisfactory agreement between theoretical and experimental results gives the evidence in favour of the suggested mechanism that the crystal electron subsystem exerts influence over processes in the atomic subsystem