Published 2024 | Version v1
Journal article

Microwave magnetic and high dielectric properties of Ca2+-Sn4+ co-substituted BiIn-YIG ferrites for device application

  • 1. School of Electronic Science and Engineering, University of Electronic Science and Technology of China, 610054, Chengdu (China)
  • 2. State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, 610054, Chengdu (China)
  • 3. The Collaborative Innovation Center of Integrated Computation and Chip Security, Chengdu University of Information Technology, 610225, Chengdu (China)
  • 4. Wuhu Golden Safety System Co., Ltd, 237011, Wuhu (China)

Description

The yttrium iron garnet (YIG) microwave ferrite is one of the key basis materials for device application. In this study, Ca2+-Sn4+ ions was chose to co-substitute Y3+-Fe3+ ions in YIG ferrite. Bi0.4Y2.6xCaxFe4.8xIn0.2SnxO12 (x = 0.0-0.25 with a step of 0.05, BiIn-YIG) ferrite materials were synthesized via solid state reaction method. The phase formation, microstructure, magnetic and dielectric properties of all samples were carried out and discussed detailed. X-ray diffraction (XRD) patterns showed that Ca-Sn co-substitution did not change the phase structure of YIG garget ferrites, and scanning electron microscope (SEM) results showed Ca-Sn promoted even grains growth. With Ca2+-Sn4+ content increase, bulk density (ρ), specific saturation magnetization (σ) and saturation magnetization (4πMs) showed the same trend of first increase and then decrease. When x = 0.2, the maximum bulk density of sample was 5.332 g/cm3, specific saturation magnetization (σ) was 28.22 emu/g, and saturation magnetization (4πMs) was 1891.35 Gs. The real part of dielectric permittivity (ε) and the real part of magnetic permeability (µ) increased with Ca2+-Sn4+ co-substitution. When x = 0.25, the value of ε was 17.03 (@10 MHz), and the value of µ was 181.3 (@1 MHz). At 9.56 GHz, ferromagnetic resonance linewidth (ΔH) of samples decreased first from 149.09 Oe (x = 0.00) to 100.46 Oe (x = 0.20), and then increased to 116.04 Oe (x = 0.25). Based on the performances of x = 0.20 sample, a high frequency microwave circulator was designed and optimized. The isolation loss and insertion loss of were less than - 20 dB in the 8.7-11.75 GHz frequency range, with a VSWR of less than 1.22. meanwhile, the circulator had an insertion loss higher than - 0.5 dB and the relative bandwidth of 31%. The results proved the possible application of these materials in high frequency microwave devices.

Availability note (English)

Available from: http://dx.doi.org/10.1007/s00339-024-07922-9

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics. A, Materials Science and Processing (Print)
Journal Volume
130
Journal Issue
10
Journal Page Range
vp.
ISSN
0947-8396
CODEN
APAMFC

Optional Information

Notes
AID: 760