Enhancing the photoelectrochemical properties of titanium dioxide by thermal treatment in oxygen deficient environment
Creators
Description
Highlights: • Oxygen vacancies in TiO2 thin films were introduced by the thermal treatment in oxygen deficient environment. • Oxygen vacancies are effective to shift the optical absorption in visible region. • The up-shift of the Fermi level and more negative flat band potential were obtained in thermal treated TiO2 films. • Thermal treated TiO2 thin films exhibits fast charge separation at the semiconductor/electrolyte interface. • Enhanced photoelectrochemical performance of TiO2 thin films in the presence of oxygen vacancies. - Abstract: The effect of thermal treatment on TiO2 thin films under oxygen deficient environment (5% H2 in Ar) at partial pressure of 2 × 10−2 Torr have been studied for photoelectrochemical (PEC) water splitting application. Thermal treatment in anatase TiO2 thin films exhibits a shift in optical absorption from UV to visible region and activates TiO2 for water splitting application under visible light. X-ray photoelectron spectroscopy results showed that the thermal treated thin films contain oxygen vacancies, which suggests improved charge transport. Optical absorption, X-ray spectroscopy (XPS) and Kelvin probe force microscope (KPFM) studies show reduction in band gap by 0.36 eV, shift in valence band maximum by 0.49 eV towards the Fermi level and work function values by 0.3 eV towards the vacuum level. The pristine TiO2 thin films exhibit very less photoactivity in terms of photocurrent density, whereas thermally treated thin films displayed a markedly enhanced photocurrent density of ∼2.41 mA/cm2 at 0.23 V vs. Ag/AgCl. Higher values of photocurrent density in thermal treated TiO2 films have been explained in terms of change in the optical and electrical properties along with energy band diagram.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.apsusc.2016.03.072Additional details
Identifiers
- DOI
- 10.1016/j.apsusc.2016.03.072;
- PII
- S0169-4332(16)30517-7;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 372
- Journal Page Range
- p. 63-69
- ISSN
- 0169-4332
- CODEN
- ASUSEE
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 48021227
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ABSORPTION; CHARGE TRANSPORT; DENSITY; ELECTRICAL PROPERTIES; ELECTRONIC STRUCTURE; FERMI LEVEL; HEAT TREATMENTS; HYDROGEN; OXYGEN; PARTIAL PRESSURE; PHOTOCURRENTS; SEMICONDUCTOR MATERIALS; SILVER CHLORIDES; THIN FILMS; TITANIUM OXIDES; VACANCIES; WORK FUNCTIONS; X RADIATION; X-RAY PHOTOELECTRON SPECTROSCOPY; X-RAY SPECTROSCOPY
- Descriptors DEC
- CHALCOGENIDES; CHLORIDES; CHLORINE COMPOUNDS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; CURRENTS; ELECTRIC CURRENTS; ELECTROMAGNETIC RADIATION; ELECTRON SPECTROSCOPY; ELEMENTS; ENERGY LEVELS; FILMS; FUNCTIONS; HALIDES; HALOGEN COMPOUNDS; IONIZING RADIATIONS; MATERIALS; NONMETALS; OXIDES; OXYGEN COMPOUNDS; PHOTOELECTRON SPECTROSCOPY; PHYSICAL PROPERTIES; POINT DEFECTS; RADIATIONS; SILVER COMPOUNDS; SILVER HALIDES; SORPTION; SPECTROSCOPY; THERMODYNAMIC PROPERTIES; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2016 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.