Comparative study of metallic silicide–germanide orthorhombic MnP systems
Creators
- 1. CIRIMAT, CNRS-INP-UPS UMR 5085, École Nationale d'Ingénieurs en Arts Chimiques et Technologiques (ENSIACET) 4, allée Émile Monso, BP 44362, F-31030 Toulouse Cedex 4 (France)
- 2. Aix-Marseille Université, CNRS, IM2NP, UMR 7334, Campus de St Jérome, F-13397 Marseille Cedex (France)
Description
We present a comparative study of the structural, energetic, electronic and elastic properties of MX type MnP systems (where X=Si or Ge, and M=Pt, Pd or Ni) using first-principles calculations. The optimized ground state properties of these systems are in excellent agreement with the experimental values. A detailed comparative study of the elastic properties of polycrystalline structures is also presented. We analyze the relationship between the composition and the properties of the systems. Finally, we present the properties of NiSi1−xGex alloys. We show that these properties depend linearly on the Ge content of the alloy. This work has important consequences for semiconductor devices in which silicides, germanides and alloys thereof are used as contact materials. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/0953-8984/25/35/355403Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Physics. Condensed Matter
- Journal Volume
- 25
- Journal Issue
- 35
- Journal Page Range
- [6 p.]
- ISSN
- 0953-8984
- CODEN
- JCOMEL
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44106794
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ALLOYS; GERMANIDES; GROUND STATES; MANGANESE PHOSPHIDES; NICKEL SILICIDES; ORTHORHOMBIC LATTICES; POLYCRYSTALS; SEMICONDUCTOR DEVICES
- Descriptors DEC
- CRYSTAL LATTICES; CRYSTAL STRUCTURE; CRYSTALS; ENERGY LEVELS; GERMANIUM COMPOUNDS; MANGANESE COMPOUNDS; NICKEL COMPOUNDS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; SILICIDES; SILICON COMPOUNDS; TRANSITION ELEMENT COMPOUNDS