Published August 2019 | Version v1
Journal article

Annealing induced defects in ZnO nanostructures

  • 1. Khwaja Fareed University of Engineering and Information Technology, Department of Physics (Pakistan)
  • 2. Pakistan Institute of Engineering and Applied Sciences (PIEAS), Department of Metallurgy and Materials Engineering, National Centre for Nanotechnology (Pakistan)
  • 3. King Saud University, Department of Physics and Astronomy, College of Science (Saudi Arabia)
  • 4. King Saud University, King Abdullah Institute for Nanotechnology (Saudi Arabia)

Description

ZnO nanostructures that do not exhibit defect-related PL emissions in the as-synthesized form have been exposed to annealing in air and argon environments at 500 °C for 2 h. That resulted in the appearance of some intrinsic defects in ZnO nanostructures. Morphology of the nanorods has also been affected by argon annealing. An intense luminescence peak appears in the PL spectra centred at 502 nm in samples annealed in argon. In contrast, the orange/red emission dominates the PL spectra of oxygen annealed nanostructures.

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics. A, Materials Science and Processing (Print)
Journal Volume
125
Journal Issue
8
Journal Page Range
p. 1-8
ISSN
0947-8396
CODEN
APAMFC

INIS

Country of Publication
Germany
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
54067330
Subject category
S36: MATERIALS SCIENCE; S77: NANOSCIENCE AND NANOTECHNOLOGY;
Descriptors DEI
ANNEALING; ARGON; DEFECTS; LUMINESCENCE; MORPHOLOGY; NANOSTRUCTURES; SPECTRA; ZINC OXIDES
Descriptors DEC
CHALCOGENIDES; ELEMENTS; EMISSION; FLUIDS; GASES; HEAT TREATMENTS; NONMETALS; OXIDES; OXYGEN COMPOUNDS; PHOTON EMISSION; RARE GASES; ZINC COMPOUNDS

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Copyright
Copyright (c) 2019 Springer-Verlag GmbH Germany, part of Springer Nature