Published November 1976
| Version v1
Journal article
De-excitation processes near the surface of ion bombarded SiO2 and Si
- 1. Australian National Univ., Canberra
- 2. Bell Telephone Labs., Inc., Murray Hill, N.J. (USA)
- 3. Commonwealth Scientific and Industrial Research Organization, North Ryde (Australia). Div. of Mineral Physics
- 4. New South Wales Univ., Kensington (Australia)
Description
Ion bombardment induced secondary ion and optical excitation from oxide coated Si has been studied as the oxide layer is eroded away. By comparing ion and photon yields, a model for the role of resonant and Auger electron transitions in the neutralisation and de-excitation of the sputtered atoms and ions has been suggested. (Auth.)
Additional details
Identifiers
Publishing Information
- Journal Title
- Surface Science
- Journal Volume
- 60
- Journal Issue
- 2
- Series
- Surf. Sci.
- Journal Page Range
- 349-364
- ISSN
- 0039-6028
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 8308128
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ARGON IONS; ATOMS; AUGER EFFECT; CATIONS; DE-EXCITATION; EMISSION SPECTRA; ION BEAMS; ION EMISSION; KEV RANGE 10-100; PHOTON EMISSION; SECONDARY EMISSION; SILICON; SILICON IONS; SILICON OXIDES; SPUTTERING; SURFACES
- Descriptors DEC
- ATOMIC IONS; BEAMS; CHALCOGENIDES; CHARGED PARTICLES; ELEMENTS; EMISSION; ENERGY RANGE; ENERGY-LEVEL TRANSITIONS; IONS; KEV RANGE; OXIDES; OXYGEN COMPOUNDS; SEMIMETALS; SILICON COMPOUNDS; SPECTRA
Optional Information
- Notes
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