Published 2019
| Version v1
Miscellaneous
The nature of the compensation effect in disordered semiconductors
Creators
- 1. Institute for Nuclear Research of NAS of Ukraine, Kyiv (Ukraine)
- 2. Institute of Physics of NANU, Kyiv, (Ukraine)
Description
no abstract available
Additional details
Additional titles
- Original title (Ukrainian)
- Priroda kompensatsyijnogo efektu v nevporyadkovanikh napyivprovyidnikakh
Publishing Information
- Publisher
- INR NAS of Ukraine
- Imprint Place
- Kyiv (Ukraine)
- Imprint Title
- Book of abstract of 26th annual scientific conference of Institute for Nuclear Research of National Academy of Sciences of Ukraine
- Imprint Pagination
- 204 p.
- Journal Page Range
- p. 119-120
- Report number
- INIS-UA--202
Conference
- Title
- 26. annual scientific conference of Institute for Nuclear Research of National Academy of Sciences of Ukraine
- Original Conference Title
- Tezi dopovyidej 26 shchoryichnoyi naukovoyi konferentsyiyi Yinstitutu Yadernikh Doslyidzhen' Natsyional'noyi Akademyiyi Nauk Ukrayini
- Dates
- 8-12 Apr 2019
- Place
- Kyiv (Ukraine)
INIS
- Country of Publication
- Ukraine
- Country of Input or Organization
- Ukraine
- INIS RN
- 50056581
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, No Abstract, Non-conventional Literature
- Descriptors DEI
- ACTIVATION ENERGY; ANALYTICAL SOLUTION; CARRIER DENSITY; CARRIER MOBILITY; CHARGE CARRIERS; EXCITATION; ORGANIC SEMICONDUCTORS; PHONONS; THIN FILMS
- Descriptors DEC
- ENERGY; ENERGY-LEVEL TRANSITIONS; FILMS; MATERIALS; MATHEMATICAL SOLUTIONS; MOBILITY; QUASI PARTICLES; SEMICONDUCTOR MATERIALS
Optional Information
- Notes
- Imprint:26. shchoryichna naukova konferentsyiya Yinstitutu Yadernikh Doslyidzhen' Natsyional'noyi Akademyiyi Nauk Ukrayini