Published June 1990
| Version v1
Journal article
Comparison of phosphorus, arsenic and boron implants into bulk silicon and SOS [silicon-on-sapphire]
Creators
- 1. Siliconix, Inc., Santa Clara, CA (USA)
- 2. Technology Modeling Associates, Palo Alto, CA (USA)
- 3. Charles Evans and Asssociates East, Plainsboro, NJ (USA)
Description
Phosphorus, arsenic and boron ions were implanted into both bulk silicon and silicon-on-sapphire (SOS) substrates. It was found that for phosphorus and arsenic the bulk and SOS impurity profiles are identical, whereas for boron the profiles in SOS are deeper than those in bulk silicon. It is assumed that the deeper profiles in SOS are due to a reduction of the electronic stopping power in the SOS films, which affects the lighter boron ions more than the heavier phosphorus and arsenic ions. This conjecture is supported by Monte Carlo implant simulations, which indicate that a reduction of the electronic stopping by roughly 10% could give rise to the observed differences in the SOS and bulk silicon implant profiles. (author)
Additional details
Publishing Information
- Journal Title
- Solid-State Electronics
- Journal Volume
- 33
- Journal Issue
- 6
- Series
- Solid-State Electron.
- Journal Page Range
- 651-654
- ISSN
- 0038-1101
- CODEN
- SSELA
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 21084609
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ARSENIC IONS; BORON IONS; DEPTH; DOPED MATERIALS; ION IMPLANTATION; ION MICROPROBE ANALYSIS; MASS SPECTROSCOPY; MATHEMATICAL MODELS; MONTE CARLO METHOD; PHOSPHORUS IONS; SAPPHIRE; SILICON; SPATIAL DISTRIBUTION; STOPPING POWER
- Descriptors DEC
- ATOMIC IONS; CHARGED PARTICLES; CHEMICAL ANALYSIS; CORUNDUM; DIMENSIONS; DISTRIBUTION; ELEMENTS; IONS; MATERIALS; MICROANALYSIS; MINERALS; NONDESTRUCTIVE ANALYSIS; OXIDE MINERALS; SEMIMETALS; SPECTROSCOPY