Published April 30, 2008
| Version v1
Journal article
The electronic structure of a single-walled aluminosilicate nanotube
- 1. School of Physics and Microelectronics, Shandong University, Jinan, Shandong 250100 (China)
Description
The geometric structure and electronic structure of an imogolite nanotube have been studied using density functional theory (DFT). The calculation results indicate that the deformation of the material leads to structural electric charges on the tube wall. This hydrous aluminosilicate single-walled nanotube is a wide gap semiconductor with a direct band gap, Eg∼3.67 eV at the Γ point, which may be promising for application in optoelectronic devices. In conjunction with the DFT calculations, molecular dynamics simulations based on empirical potentials are also performed to evaluate the mechanical properties of this material
Availability note (English)
Available from http://dx.doi.org/10.1088/0957-4484/19/17/175702Additional details
Identifiers
- DOI
- 10.1088/0957-4484/19/17/175702;
- PII
- S0957-4484(08)65940-1;
Publishing Information
- Journal Title
- Nanotechnology (Print)
- Journal Volume
- 19
- Journal Issue
- 17
- Journal Page Range
- [9 p.]
- ISSN
- 0957-4484
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 39108447
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- DEFORMATION; DENSITY FUNCTIONAL METHOD; ELECTRIC CHARGES; ELECTRONIC STRUCTURE; EV RANGE 01-10; MECHANICAL PROPERTIES; MOLECULAR DYNAMICS METHOD; NANOTUBES; SEMICONDUCTOR MATERIALS; SIMULATION
- Descriptors DEC
- CALCULATION METHODS; ENERGY RANGE; EV RANGE; MATERIALS; NANOSTRUCTURES; VARIATIONAL METHODS