Published April 30, 2008 | Version v1
Journal article

The electronic structure of a single-walled aluminosilicate nanotube

  • 1. School of Physics and Microelectronics, Shandong University, Jinan, Shandong 250100 (China)

Description

The geometric structure and electronic structure of an imogolite nanotube have been studied using density functional theory (DFT). The calculation results indicate that the deformation of the material leads to structural electric charges on the tube wall. This hydrous aluminosilicate single-walled nanotube is a wide gap semiconductor with a direct band gap, Eg∼3.67 eV at the Γ point, which may be promising for application in optoelectronic devices. In conjunction with the DFT calculations, molecular dynamics simulations based on empirical potentials are also performed to evaluate the mechanical properties of this material

Availability note (English)

Available from http://dx.doi.org/10.1088/0957-4484/19/17/175702

Additional details

Identifiers

DOI
10.1088/0957-4484/19/17/175702;
PII
S0957-4484(08)65940-1;

Publishing Information

Journal Title
Nanotechnology (Print)
Journal Volume
19
Journal Issue
17
Journal Page Range
[9 p.]
ISSN
0957-4484

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
39108447
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
DEFORMATION; DENSITY FUNCTIONAL METHOD; ELECTRIC CHARGES; ELECTRONIC STRUCTURE; EV RANGE 01-10; MECHANICAL PROPERTIES; MOLECULAR DYNAMICS METHOD; NANOTUBES; SEMICONDUCTOR MATERIALS; SIMULATION
Descriptors DEC
CALCULATION METHODS; ENERGY RANGE; EV RANGE; MATERIALS; NANOSTRUCTURES; VARIATIONAL METHODS