Published April 6, 2015 | Version v1
Journal article

Verification of electron doping in single-layer graphene due to H2 exposure with thermoelectric power

  • 1. Department of Physics and Astronomy, Seoul National University, Seoul 151-747 (Korea, Republic of)
  • 2. Department of Nano Science and Technology, Seoul National University, Seoul 151-747 (Korea, Republic of)
  • 3. Department of Chemistry Education, Seoul National University, Seoul 151-742 (Korea, Republic of)
  • 4. Department of Physics, Incheon National University, Incheon 406-772 (Korea, Republic of)
  • 5. Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-412 96 Göteborg (Sweden)

Description

We report the electron doping of single-layer graphene (SLG) grown by chemical vapor deposition (CVD) by means of dissociative hydrogen adsorption. The transfer characteristic showed n-type doping behavior similar to that of mechanically exfoliated graphene. Furthermore, we studied the thermoelectric power (TEP) of CVD-grown SLG before and after exposure to high-pressure H2 molecules. From the TEP results, which indicate the intrinsic electrical properties, we observed that the CVD-grown SLG is n-type doped without degradation of the quality after hydrogen adsorption. Finally, the electron doping was also verified by Raman spectroscopy

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
106
Journal Issue
14
Journal Page Range
p. 142110-142110.4
ISSN
0003-6951
CODEN
APPLAB

Optional Information

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