Published July 15, 2006
| Version v1
Journal article
Gas source MBE growth and doping characteristics of AlInP on GaAs
Creators
- 1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)
Description
The ternary wide bandgap AlInP alloys have been grown on GaAs substrates by using gas source molecular beam epitaxy, and the relationship between various growth parameters and the composition, lattice mismatch, surface morphology as well as doping concentration of the AlInP epi-layers have been investigated in detail. The AlInP epi-layer with lattice mismatch of +4.3 x 10-4 and full-width at half-maximum of X-ray diffraction peaks of 21.6'' and 14.9'' for epi-layer and substrate respectively have been obtained. The maximum reachable p and n type carrier concentration for Be or Si doping were found to be around 1 x 1018 and 5 x 1018 cm-3 respectively around lattice match composition
Additional details
Identifiers
- DOI
- 10.1016/j.mseb.2006.03.026;
- PII
- S0921-5107(06)00201-7;
Publishing Information
- Journal Title
- Materials Science and Engineering. B, Solid-State Materials for Advanced Technology
- Journal Volume
- 131
- Journal Issue
- 1-3
- Journal Page Range
- p. 49-53
- ISSN
- 0921-5107
- CODEN
- MSBTEK
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 38082562
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALLOYS; CARRIERS; CRYSTAL DEFECTS; CRYSTAL GROWTH; GALLIUM ARSENIDES; LAYERS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; SUBSTRATES; X-RAY DIFFRACTION
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; DIFFRACTION; EPITAXY; GALLIUM COMPOUNDS; PNICTIDES; SCATTERING
Optional Information
- Copyright
- Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.