Published 2001
| Version v1
Miscellaneous
Schottky barriers for AlGaN/GaN device heterostructures
Creators
- 1. Institute of Microsystems Technology, Wroclaw University of Technology, Wroclaw (Poland)
Description
no abstract available
Additional details
Publishing Information
- Publisher
- Oficyna Wydawnicza Politechniki Warszawskiej
- ISBN
- 0-7803-7136-4
- Imprint Title
- Abstracts of 3. International Conference Novel Applications of Wide Bandgap Layers
- Imprint Pagination
- 207 p.
- Journal Page Range
- p. 185
Conference
- Title
- Novel Applications of Wide Bandgap Layers
- Acronym
- 3. International Conference
- Dates
- 26-30 Jun 2001
- Place
- Zakopane (Poland)
INIS
- Country of Publication
- Poland
- Country of Input or Organization
- Poland
- INIS RN
- 33033813
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract, Conference, Non-conventional Literature
- Descriptors DEI
- ALUMINIUM COMPOUNDS; CHEMICAL COMPOSITION; ELECTRIC CONTACTS; ELECTRICAL PROPERTIES; GALLIUM COMPOUNDS; GALLIUM NITRIDES; HETEROJUNCTIONS; INTERFACES; LAYERS; NITRIDES; OPTIMIZATION; ORGANOMETALLIC COMPOUNDS; SAPPHIRE; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR MATERIALS; SUBSTRATES; THIN FILMS; VAPOR PHASE EPITAXY
- Descriptors DEC
- CORUNDUM; CRYSTAL GROWTH METHODS; ELECTRICAL EQUIPMENT; EPITAXY; EQUIPMENT; FILMS; GALLIUM COMPOUNDS; MATERIALS; MINERALS; NITRIDES; NITROGEN COMPOUNDS; ORGANIC COMPOUNDS; OXIDE MINERALS; PHYSICAL PROPERTIES; PNICTIDES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS