Published July 2011 | Version v1
Journal article

Efficient 1.35 μm laser emission of Nd-doped Sr3Ga2Ge4O14 under in-band pumping with diode lasers

  • 1. The Second Hospital of Jilin University, Changchun 130041 (China)
  • 2. School of OptoElectronic Engineering, Changchun University of Science and Technology, Changchun 130022 (China)

Description

We describe the output performances of the 1.35 μm 4F3/2 → 4I13/2 transition in Nd-doped Sr3Ga2Ge4O14 (SGG) under in-band pumping with diode lasers at the 879 nm wavelength, directly into the 4F3/2 emitting level. An end-pumped Nd:SGG crystal yielded 7.1 W of continuous-wave (CW) output power for 17.7 W of absorbed pump power. The slope efficiency with respect to the absorbed pump power was 47.7%. To the best of our knowledge this is the first demonstration of such a laser system. Comparative results obtained for the pump with diode laser at 806 nm, into the highly-absorbing 4F5/2 level, are given in order to prove the advantages of the in-band pumping

Availability note (English)

Available from http://dx.doi.org/10.1002/lapl.201110030

Additional details

Identifiers

Publishing Information

Journal Title
Laser physics letters (Internet)
Journal Volume
8
Journal Issue
7
Journal Page Range
p. 525-528
ISSN
1612-202X