Published October 15, 2004
| Version v1
Journal article
A functional InGaP/GaAs double heterostructure-emitter bipolar transistor with multiple negative-differential-resistance switches
Creators
- 1. Department of Physics, National Kaohsiung Normal University 116, Ho-ping 1st Road, Kaohsiung, Taiwan (China)
Description
A functional InGaP/GaAs double heterostructure-emitter bipolar transistor (DHEBT) is fabricated and demonstrated. Due to the large valence band discontinuity to conduction band discontinuity ratio at InGaP/GaAs heterojunction and the symmetrical structure, excellent transistor performances with a high current gain of 195 and a low collector-emitter (C-E) offset voltage of 60 mV are achieved. In particular, attributed to the avalanche multiplication and confinement effect for electrons at InGaP/GaAs heterojunction, an interesting multiple S-shaped negative-differential-resistance (NDR) switches is observed under large C-E forward voltage
Additional details
Identifiers
- DOI
- 10.1016/j.matchemphys.2004.06.027;
- PII
- S0254-0584(04)00307-4;
Publishing Information
- Journal Title
- Materials Chemistry and Physics
- Journal Volume
- 87
- Journal Issue
- 2-3
- Journal Page Range
- p. 435-438
- ISSN
- 0254-0584
- CODEN
- MCHPDR
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37052077
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- GALLIUM ARSENIDES; GALLIUM PHOSPHIDES; INDIUM PHOSPHIDES; SWITCHES; TOWNSEND DISCHARGE; TRANSISTORS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; ELECTRIC DISCHARGES; ELECTRICAL EQUIPMENT; EQUIPMENT; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; SEMICONDUCTOR DEVICES
Optional Information
- Copyright
- Copyright (c) 2004 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.