Segregation of voids in a spatially heterogeneous dislocation microstructure
- 1. Department of Electronic and Information Engineering, Polytechnic University of Hong-Kong, Hung Hom, Kowloon, Hong-Kong (China)
- 2. EURATOM/UKAEA Fusion Association, Culham Science Centre, Oxfordshire OX14 3DB (United Kingdom)
Description
We investigate the dynamics of nucleation and the growth of voids in an irradiated material in the presence of a spatially heterogeneous dislocation microstructure. We find that, due to the sensitivity of the void nucleation rate to the local vacancy supersaturation, voids nucleate and grow almost exclusively in the regions where the density of dislocations is low. Numerical simulations show that the relatively high void growth rates observed experimentally in the regions of low dislocation density, leading to segregated evolution of dislocations and voids, can be naturally described by solutions of a spatially heterogeneous reaction-diffusion model that takes continuous nucleation of voids into account but does not assume the occurrence of long-range one-dimensional transport of clusters of self-interstitial atoms through the material
Additional details
Identifiers
Publishing Information
- Journal Title
- Physical Review. B, Condensed Matter and Materials Physics
- Journal Volume
- 70
- Journal Issue
- 9
- Journal Page Range
- p. 094115-094115.8
- ISSN
- 1098-0121
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 36102792
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Descriptors DEI
- DIFFUSION; DISLOCATIONS; INTERACTIONS; INTERSTITIALS; IRRADIATION; MICROSTRUCTURE; RADIATION EFFECTS; SEGREGATION; SIMULATION; SUPERSATURATION; VACANCIES; VOIDS
- Descriptors DEC
- CRYSTAL DEFECTS; CRYSTAL STRUCTURE; LINE DEFECTS; POINT DEFECTS; SATURATION
Optional Information
- Notes
- (c) 2004 The American Physical Society