Gamma- and thermoluminescence spectra of artificial diamonds doped by impurities

To determine the effect of impurities on the radiational-optical phenomena in diamond, the γ-luminescence at 340 and 800K and thermoluminescence at 77-6000K of synthetic diamond, alloyed with Al, B, P, Ti, Ga, In, B + Ti, Al + Ti, P + Al, B + P in various amounts, were studied. The γ-luminescence of the synthetic diamond is caused by N impurities in combination with defect-like C vacancies, which are formed during γ-irradiation or during crystal growth. The dependence of the γ-luminescence intensity on impurity concentration is due to an increase in the concentration of the various impurities which contribute to a greater inclusion of N impurities into the diamond. From the thermoluminescenc curves, the temperature position of the thermoluminescence peak and its intensity depend on the type and the concentration of the alloying impurity. With Al, Ga, In, and P, 3 thermoluminescence peaks are observed at 160, 240, and 3200 and their intensity at 1st increases with increasing impurity concentration and then with greater impurity concentration, it decreases. The structure of the thermoluminescence curves agrees with that for the γ-luminescence curves