Published January 2003 | Version v1
Journal article Metadata-only

Asymmetry in the voltage shift in Pt/Pb(Zr,Ti)O3/Pt thin-film capacitors

Creators

  • 1. Chosun Univ., Gwangju (Korea, Republic of)
  • 2. Kookmin Univ., Seoul (Korea, Republic of)
  • 3. Sejong Univ., Seoul (Korea, Republic of)

Description

The change in the internal field b heating imprinted Pt/PZT/Pt capacitors and by aging polarized capacitors has been investigated. The annealing temperature for the relaxation of the internal field in imprinted capacitors increases as the Zr/Ti ratio decreases. The reorientation rate of the internal field is almost independent of the Zr/Ti ratio. The positive internal field is found to be larger than the negative field at a certain aging time. This asymmetric voltage shift indicates that the oxygen vacancy concentration near the top electrode is higher than near the bottom electrode

Additional details

Publishing Information

Journal Title
Journal of the Korean Physical Society
Journal Volume
42
Journal Issue
1
Series
18 refs, 4 figs
Journal Page Range
p. 158-161
ISSN
0374-4884

INIS

Country of Publication
Korea, Republic of
Country of Input or Organization
Korea, Republic of
INIS RN
35029040
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ANNEALING; CAPACITORS; FERROELECTRIC MATERIALS; HYSTERESIS; INTERFACES; PLATINUM; PZT; THIN FILMS; VACANCIES
Descriptors DEC
CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DIELECTRIC MATERIALS; ELECTRICAL EQUIPMENT; ELEMENTS; EQUIPMENT; FILMS; HEAT TREATMENTS; LEAD COMPOUNDS; MATERIALS; METALS; OXYGEN COMPOUNDS; PLATINUM METALS; POINT DEFECTS; TITANATES; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS; ZIRCONATES; ZIRCONIUM COMPOUNDS