Published April 1997 | Version v1
Miscellaneous Open

Ionization stimulated processes of defect formation in gallium selenide

  • 1. Ferganskij Politekhnicheskij Inst. Fergana (Uzbekistan)

Description

The radiation defects in gallium selenide under the irradiation by 50 keV X-rays were studied by registartion of current carriers concentration determined from Hall-effect measurements and by the cahnge of photoconductivity spectra. It was shown that for subthreshold defect formation the ionization of K,L-atomic shells is responsible. The cross sections of defect formation processes were obtained

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Part of:
Abstracts of the International conference 'Problems of theoretical physics and physics of solid state'

Additional details

Additional titles

Original title (Russian)
Ионизационно-стимулированные процеccы дефектообразования в селениде галлия

Publishing Information

Imprint Title
Abstracts of the International conference 'Problems of theoretical physics and physics of solid state'
Imprint Pagination
177 p.
Journal Page Range
p. 63
Report number
INIS-UZ--063

Conference

Title
International conference on problems of theoretical physics and physics of solid state
Dates
24-26 Apr 1997
Place
Bukhara (Uzbekistan)

Optional Information

Notes
1 refs. Imprint:Tezisy dokladov Mezhdunarodnoj konferentsii 'Problemy teoreticheskoj fiziki i fiziki tverdogo tela'