Published November 24, 2008 | Version v1
Journal article Metadata-only

Narrow-band deep-ultraviolet light emitting device using Al1-xGdxN

Creators

  • 1. Department of Electrical and Electronics Engineering, Graduate School of Engineering, Kobe University, Rokkodai 1-1, Nada, Kobe 657-8501 (Japan)
  • 2. YUMEX INC., Itoda 400, Yumesaki, Himeji, Hyogo, 671-2114 (Japan)

Description

We demonstrated mercury-free narrow-band deep-ultraviolet luminescence from field-emission devices with Al1-xGdxN thin films. The Al1-xGdxN thin films were grown on fused silica substrates by a radio frequency reactive magnetron sputtering method. The deposited film shows a strong c-axis preferential orientation. A resolution limited, narrow intra-4f luminescence line from Gd3+ ions has been observed at 315 nm. The luminescence spectrum depends on the growth temperature of the thin film, and the intensity varies as a function of the GdN mole fraction

Additional details

Identifiers

DOI
10.1063/1.3028341;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
93
Journal Issue
21
Journal Page Range
p. 211901-211901.3
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
40051148
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ALUMINIUM COMPOUNDS; CRYSTAL GROWTH; DEPOSITION; FIELD EMISSION; GADOLINIUM IONS; GADOLINIUM NITRIDES; GRAIN ORIENTATION; LIGHT EMITTING DIODES; PHOTOLUMINESCENCE; RESOLUTION; SEMICONDUCTOR MATERIALS; SILICA; SPUTTERING; SUBSTRATES; THIN FILMS; ULTRAVIOLET RADIATION
Descriptors DEC
CHARGED PARTICLES; ELECTROMAGNETIC RADIATION; EMISSION; FILMS; GADOLINIUM COMPOUNDS; IONS; LUMINESCENCE; MATERIALS; MICROSTRUCTURE; MINERALS; NITRIDES; NITROGEN COMPOUNDS; ORIENTATION; OXIDE MINERALS; PHOTON EMISSION; PNICTIDES; RADIATIONS; RARE EARTH COMPOUNDS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES

Optional Information

Notes
(c) 2008 American Institute of Physics