Published May 15, 2014 | Version v1
Journal article Metadata-only

Room-temperature nonlinear transport phenomena in low-dimensional Ni-Nb-Zr-H glassy alloys and its device

Creators

  • 1. Institute for Materials Research, Tohoku University, 2-1-1, Katahira, Aoba, Sendai, 980-8577 (Japan)

Description

We report the room-temperature switching and Coulomb blockade effects in three–terminal glassy alloy field effect transistor (GAFET), using the millimeter sized glassy alloy. By applying dc and ac voltages to a gate electrode, GAFET can be switched from a metallic conducting state to an insulating state with Coulomb oscillation at a period of 14 μV at room temperature. The transistor showed the three-dimensional Coulomb diamond structure. The fabrication of a low-energy controllable device throws a new light on cluster electronics without wiring

Additional details

Identifiers

DOI
10.1063/1.4878309;

Publishing Information

Journal Title
AIP Conference Proceedings
Journal Volume
1598
Journal Issue
1
Journal Page Range
p. 205-209
ISSN
0094-243X
CODEN
APCPCS

Conference

Title
7. international conference on low dimensional structures and devices
Acronym
LDSD 2011
Dates
22-27 May 2011
Place
Telchac (Mexico)

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
45101661
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
COULOMB FIELD; CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; FABRICATION; FIELD EFFECT TRANSISTORS; HYDROGEN ADDITIONS; METALLIC GLASSES; NICKEL ALLOYS; NIOBIUM ALLOYS; NONLINEAR PROBLEMS; OSCILLATIONS; TEMPERATURE RANGE 0273-0400 K; ZIRCONIUM ALLOYS
Descriptors DEC
ALLOYS; ELECTRIC FIELDS; ELECTRICAL PROPERTIES; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES; TEMPERATURE RANGE; TRANSISTORS; TRANSITION ELEMENT ALLOYS

Optional Information

Notes
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