Published June 2015 | Version v1
Journal article

Improvement of the crstallinity of MgZnO with a Zn bugger layer by sol-gel spin-coating method

  • 1. Dept. of Nanoscience and Engineering, Inje University, Gimhae (Korea, Republic of)

Description

We fabricate magnesium zinc oxide (MZO) thin films inserting a buffer layer between a film and a substrate with different annealing temperatures. The structural and optical properties of MZO thin films are investigated by using scanning electron microscopy, X-ray diffraction (XRD), and photoluminescence. The XRD patterns for the buffer layers annealed at 200 °C show the narrowest full width at half maximum and the most intense (0 0 2) diffraction peak. In addition, the buffer layers decrease the magnitude of the residual stress between the MZO thin film and the silicon substrate. The near-band-edge emission peaks intensify and the deep-level emission peaks significantly intensify with increasing buffer layer annealing temperatures. Inserting a buffer layer between a film and a substrate improves the crystallinity of MZO thin films

Additional details

Publishing Information

Journal Title
Bulletin of the Korean Chemical Society
Journal Volume
36
Journal Issue
6
Series
29 refs, 3 figs, 1 tab
Journal Page Range
p. 1575-1579
ISSN
0253-2964