Published March 2007
| Version v1
Journal article
Ferromagnetism in Co-doped indium-tin oxide films
- 1. Instituto de Ciencia de Materiales de Aragon, CSIC and Universidad de Zaragoza, 50009 Zaragoza (Spain)
- 2. Departamento de Fisica Aplicada, Universidad de Zaragoza, 50009-Zaragoza (Spain)
- 3. Instituto Universitario de Investigacion en Nanociencia de Aragon, Universidad de Zaragoza, 50009-Zaragoza (Spain)
Description
Co-doped indium-tin oxide (ITO) films were produced by magnetron sputtering on fused quartz substrates under various conditions. We find that post-growth processing of films affects crucially their electronic and magnetic properties. Films with 30at% of Co show hysteretic magnetization and anomalous Hall effect up to room temperature. Values of up to 1.6μB per Co atom are obtained for the saturation magnetic moment in these films. A mixed magnetic state with Co-rich ITO or Co-metal nanoclusters within a homogeneous ITO:Co matrix might give rise to such behavior
Additional details
Identifiers
- DOI
- 10.1016/j.jmmm.2006.10.1015;
- PII
- S0304-8853(06)02239-6;
Publishing Information
- Journal Title
- Journal of Magnetism and Magnetic Materials
- Journal Volume
- 310
- Journal Issue
- 2
- Journal Page Range
- p. 2084-2086
- ISSN
- 0304-8853
- CODEN
- JMMMDC
Conference
- Title
- 17. international conference on magnetism
- Dates
- 20-25 Aug 2006
- Place
- Kyoto (Japan)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 39022239
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- DOPED MATERIALS; FERROMAGNETISM; HALL EFFECT; INDIUM OXIDES; MAGNETIC MOMENTS; MAGNETIC PROPERTIES; MAGNETIC SEMICONDUCTORS; MAGNETIZATION; MAGNETRONS; NANOSTRUCTURES; SPUTTERING; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; TIN OXIDES
- Descriptors DEC
- CHALCOGENIDES; ELECTRON TUBES; ELECTRONIC EQUIPMENT; EQUIPMENT; FILMS; INDIUM COMPOUNDS; MAGNETISM; MATERIALS; MICROWAVE EQUIPMENT; MICROWAVE TUBES; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; SEMICONDUCTOR MATERIALS; TEMPERATURE RANGE; TIN COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.