Published 1994
| Version v1
Book
High-temperature dissociation pressure of silicon nitride
- 1. Inst. for New Chemical Problems, Russian Academy of Sciences, Chernogolovka (Russian Federation)
- 2. Scientific-Research Inst. ''Lutch'', Podolosk (Russian Federation)
Description
Parameters of the Si3N4 dissociation pressure at 1350 -2000 C were obtained by the Knudsen technique for three types of powders with different admixtures level. As a whole, the nitrogen pressure was observed to increase with increasing the oxygen content. However, this dependence was not constant at all temperatures for the investigated powders. From the information on the dissociation the values of the enthalphy and Gibbs free energy of Si3N4 formation were evaluated and discussed. This discussion has revealed that our results for the powder III (1.25%O) and especially one II (1.6 wt%O) seem very reliable. (orig.)
Additional details
Publishing Information
- Publisher
- Trans Tech Publ.
- Imprint Place
- Aedermannsdorf (Switzerland)
- ISBN
- 0-87849-668-8
- Imprint Title
- Silicon nitride 93
- Imprint Pagination
- 782 p.
- Journal Volume
- 89-91
- Series
- Key Engineering Materials.
- Journal Page Range
- p. 369-372.
- ISSN
- 1013-9826
- CODEN
- KEMAEY
Conference
- Title
- International conference on silicon nitride-based ceramics.
- Dates
- 4-6 Oct 1993.
- Place
- Stuttgart (Germany).
INIS
- Country of Publication
- Switzerland
- Country of Input or Organization
- Switzerland
- INIS RN
- 25057798
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- DISSOCIATION; FREE ENERGY; FREE ENTHALPY; NITROGEN; OXYGEN; POWDERS; PRESSURE DEPENDENCE; SILICON NITRIDES; TEMPERATURE DEPENDENCE
- Descriptors DEC
- ELEMENTS; ENERGY; NITRIDES; NITROGEN COMPOUNDS; NONMETALS; PHYSICAL PROPERTIES; PNICTIDES; SILICON COMPOUNDS; THERMODYNAMIC PROPERTIES